Optical pumping of charged excitons in unintentionally doped InAs quantum dots

As an alternative to commonly used electrical methods, we have investigated the optical pumping of charged exciton complexes addressing impurity related transitions with photons of the appropriate energy. Under these conditions, we demonstrate that the pumping fidelity can be very high while still maintaining a switching behavior between the different excitonic species. This mechanism has been investigated for single quantum dots of different size present in the same sample and compared with the direct injection of spectator electrons from nearby donors.Comment: 4 pages and 3 figures submitted to AP

InAs/InP single quantum wire formation and emission at 1.5 microns

Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 microns. Additional sharp features are related to monolayer fluctuations of the two dimensional InAs layer present during the early stages of the quantum wire self-assembling process.Comment: 4 pages and 3 figures submitted to Applied Physics Letter

Exciton Gas Compression and Metallic Condensation in a Single Semiconductor Quantum Wire

We study the metal-insulator transition in individual self-assembled quantum wires and report optical evidences of metallic liquid condensation at low temperatures. Firstly, we observe that the temperature and power dependence of the single nanowire photoluminescence follow the evolution expected for an electron-hole liquid in one dimension. Secondly, we find novel spectral features that suggest that in this situation the expanding liquid condensate compresses the exciton gas in real space. Finally, we estimate the critical density and critical temperature of the phase transition diagram at $n_c\sim1\times10^5$ cm$^{-1}$ and $T_c\sim35$ K, respectively.Comment: 4 pages, 5 figure

Observation of Faraday rotation from a single confined spin

Ability to read-out the state of a single confined spin lies at the heart of solid-state quantum information processing. While all-optical spin measurements using Faraday rotation has been successfully implemented in ensembles of semiconductor spins, read-out of a single semiconductor spin has only been achieved using transport measurements based on spin-charge conversion. Here, we demonstrate an all-optical dispersive measurement of the spin-state of a single electron trapped in a semiconductor quantum dot. We obtain information on the spin state through conditional Faraday rotation of a spectrally detuned optical field, induced by the polarization- and spin-selective trion (charged quantum dot) transitions. To assess the sensitivity of the technique, we use an independent resonant laser for spin-state preparation. An all-optical dispersive measurement on single spins has the important advantage of channeling the measurement back-action onto a conjugate observable, thereby allowing for repetitive or continuous quantum nondemolition (QND) read-out of the spin-state. We infer from our results that there are of order unity back-action induced spin-flip Raman scattering events within our measurement timescale. Therefore, straightforward improvements such as the use of a solid-immersion lens and higher efficiency detectors would allow for back-action evading spin measurements, without the need for a cavity

Strain balanced quantum posts

Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here we present a strain compensation technique based on the controlled incorporation of phosphorous, which substantially increases the maximum attainable quantum post height. The luminescence from the resulting nanostructures presents giant linear polarization anisotropy.Comment: Submitted to Applied Physics Letters (7th March 2011). 4 pages, 4 figure

Charge control in laterally coupled double quantum dots

We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunnelling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compared to that of excitons in our system.Comment: 4 pages, 4 figures submitted to PRB Rapid Com

Magnetically controlled exciton transfer in hybrid quantum dot-quantum well nanostructures

A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier thickness at strong magnetic field and excitation density. For the case of a thin barrier the QW PL intensity is observed to increase at the expense of a decrease in the QD PL intensity. This is attributed to changes in the interplane carrier dynamics in the QW and the wetting layer (WL) resulting from increasing the magnetic field along with changes in the coupling between QD excited states and exciton states in the QW and the WL

Strong extinction of a far-field laser beam by a single quantum dot

Through the utilization of index-matched GaAs immersion lens techniques we demonstrate a record extinction (12%) of a far-field focused laser by a single InAs/GaAs quantum dot. This contrast level enables us to report for the first time resonant laser transmission spectroscopy on a single InAs/GaAs quantum dot without the need for phase-sensitive lock-in detection

Synthesis and luminescence properties of electrodeposited ZnO Films

ZnO films have been grown on gold (111) by electrodeposition using two different OH- sources, nitrate and peroxide, in order to obtain a comparative study between these films. The morphology, structural and optical characterization of the films were investigated depending on the solution used (nitrate and peroxide) and the applied potential. Scanning Electron Microscopy pictures show different morphologies in each case. X-Ray Diffraction confirms that the films are pure ZnO oriented along the (0002) direction. ZnO films have been studied by photoluminescence to identify the emission of defects in the visible range. A consistent model that explains the emissions for the different electrodeposited ZnO films is proposed. We have associated the green and yellow emissions to a transition from the donor OH- to the acceptor zinc vacancies (VZn-) and to interstitial oxygen (Oi0), respectively. The orange-red emission is probably due to transitions from the conducting band to Oi- and OZn 0 defects and the infrared emission to transition from these Oi -/2- and OZn 0/- defects to the valence band.Comment: 17 pages, 1 Table and 10 figure